There are six parts that will handle inputs from 4.5 – 16V (see table below) then four that will handle 4.5 – 21V – there is no 100A option in the higher voltage devices. Different versions are tuned for 3.3 or 5V logic inputs.
Efficiency can be above 93% in some application, said the company, and diode emulation can be pin-enabled at light loads.
The internal power mosfets are made on the company’s TrenchFet Gen IV process and Schottky diodes are included alongside the driver – a driver which has: adaptive dead-time control, a bootstrap switch, a thermal monitor and a current monitor.
Safety features include under-voltage lock-out and fault alerts such as high-side switch over-current, high-side switch short and over-temperature.
Taking the SiC822 and SiC822A versions as an example, operation is up to 2MHz and the mosfets are optimised for 12V inputs and 10 to 15% duty-cycle operation – PWM minimum controllable on-time is 30ns. PWM propagation delay is <20ns.
Packaging is 5 x 6mm thermally-enhanced MLP56-39.
A nice block diagram would have been included above, but sadly full data sheets are not available, and the data brief does not include one.Applications are foreseen in data centres, other high performance computing and 5G mobile infrastructure – powering processors and SoC from Intel, AMD and Nvidia Corporation. The devices are optimized for synchronous buck converters; multiphase VRDs for CUPs, GPUs, and memory; and DC/DC VR modules.
