These power modules target applications for high density computing and data centers, artificial intelligence, machine learning, and multi-user gaming.
The MPC1100-54-0000 is the first in the new product family that will include modules in an LLC topology that utilize eGaN FETs to achieve an overall efficiency above 97% in a footprint of only 27 mm x 18 mm x 6 mm for 48 V – 6 V conversion.
A key advantage of 48 V – 6 V front-end conversion includes the enabling of a high frequency secondary stage that is small enough to be placed much closer to the xPU/ASIC/GPU to reduce the power distribution loss by 4x compared to the commonly used STC topology for 48V – 12V conversion.
For high-density server applications, record power density and efficiency can be achieved with simple, low cost topologies such as an LLC DC-DC converter. eGaN FETs are well suited for LLC converters due to their combined low gate charge with 5 V gate operation that yields very low gate power consumption, ultra-low on-resistance, and low output capacitance charge.
With power levels ranging from 300 W to 1000 W, these modules are scalable to accommodate a range of high current and high power applications. Customers can add up to three modules to address higher power requirements, or scale down to one or two modules for lower power requirements.
“Advanced computing applications are putting higher demands on power converters, and silicon-based power conversion is not keeping pace,” said Alex Lidow, CEO of EPC. “We are delighted to work with MPS, a leader in this space, to implement GaN into their modules, allowing customers to increase the efficiency, shrink the size, and reduce system cost for 48 V power conversion.”
